Low-Temperature Fabrication (≤ 150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment | Intelligent Semiconductor and Wearable Devices

Low-Temperature Fabrication (≤ 150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment

2021/01/27
Taewon Seo, Gilsu Jeon, Hyuk Park, Juyoung Yun, Seongmin Park, Suwon Seong, Yoonyoung Chung
Korean Conference on Semiconductors (KCS), Virtual Conference

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